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Freescale Semiconductor Technical Data
Document Number: MRF6S27050H Rev. 0, 11/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 22.5% ACPR @ 5 MHz Offset -- - 42.5 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S27050HR3 MRF6S27050HSR3
2500 - 2700 MHz, 7 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S27050HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S27050HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 43 W CW Case Temperature 72C, 7 W CW Symbol RJC Value (2,3) 0.85 0.98 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S27050HR3 MRF6S27050HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 0.83 232 -- -- pF pF VGS(th) VGS(Q) VDS(on) 1 2 -- 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. W - CDMA, f = 2585 MHz and 2615 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps D ACPR IRL 15 20.5 - 40 -- 16 22.5 - 42.5 - 10 18 -- -- -- dB % dBc dB
MRF6S27050HR3 MRF6S27050HSR3 2 RF Device Data Freescale Semiconductor
R1 B2 VBIAS + C7 RF INPUT + C6 C5 C4 C3 Z9 Z8 Z10 Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 DUT Z11 Z12 Z13 Z14 Z15 Z16 C2 Z17 B1 C8 + C9 + C10 C11 C12 C13 + C14 + C15 RF OUTPUT VSUPPLY
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.748 0.273 0.055 0.090 0.195 0.797 0.082 0.050 0.070
x 0.081 x 0.081 x 0.220 x 0.440 x 0.170 x 0.490 x 0.490 x 0.476 x 0.350
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.091 x 0.753 Microstrip 0.150 x 0.753 Microstrip 0.153 x 0.543 Microstrip 0.145 x 0.384 Microstrip 0.446 x 0.148 Microstrip 0.130 x 0.425 Microstrip 0.384 x 0.081 Microstrip 0.730 x 0.081 Microstrip Arlon GX0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part B1 B2 C1, C2 C3, C8 C4, C11 C5 C6 C7 C9, C10 C12, C13 C14 C15 R1 Ferrite Bead Ferrite Bead, Short 4.3 pF Chip Capacitors 3.6 pF Chip Capacitors 2.2 F, 50 V Chip Capacitors 0.01 F, 100 V Chip Capacitor 22 F, 25 V Tantulum Capacitor 47 F, 16 V Tantalum Capacitor 10 F, 50 V Tantalum Capacitors 1.0 F, 50 V Chip Capacitors 330 F, 63 V Electrolytic Capacitor 47 F, 50 V Electrolytic Capacitor 2.7 , 1/4 W Chip Resistor Description Part Number 2508051107Y0 2743019447 600B4R3BT250XT 600B3R6BT250XT C1825C225J5RAC C1825C103J1RAC ECS - T1ED226R T491D476K016AT 522Z - 050/100MTRE GRM32RR71H105KA01B SME63V331M12X25LL MVK50VC47RM8X10TP CRCW12062R7F100 Manufacturer Fair - Rite Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Tecate Murata Nippon Chemi - Con United Chemi - Con Vishay
MRF6S27050HR3 MRF6S27050HSR3 RF Device Data Freescale Semiconductor 3
C11 C14 B2 B1 C3 C9 C10 C8 R1 C7 C6 C4 Top C5 Bottom C12 C13 C15
C1 CUT OUT AREA
C2
MRF6S27050 Rev. 1A
Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout
MRF6S27050HR3 MRF6S27050HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
19 18 17 Gps, POWER GAIN (dB) 16 15 IRL 14 13 12 ALT1 11 -70 2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz) ACPR -40 -50 -60 D Gps 24 23 22 VDD = 28 Vdc, Pout = 7 W (Avg.), IDQ = 500 mA 21 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 20 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 IRL, INPUT RETURN LOSS (dB) 750 mA IRL, INPUT RETURN LOSS (dB)
Figure 3. Single - Carrier W - CDMA Broadband Performance @ Pout = 7 Watts Avg.
19 18 17 Gps, POWER GAIN (dB) 16 15 IRL 14 13 12 ALT1 ACPR Gps D 34 33 32 VDD = 28 Vdc, Pout = 14 W (Avg.) 31 IDQ = 500 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 30 PAR = 8.5 dB @ 0.01% Probability (CCDF) -30 -40 -50
11 -60 2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance @ Pout = 14 Watts Avg.
20 19 Gps, POWER GAIN (dB) 18 17 500 mA 16 15 14 125 mA 13 12 1 VDD = 28 Vdc f1 = 2598.75 MHz, f2 = 2601.25 MHz Two-Tone Measurements 10 Pout, OUTPUT POWER (WATTS) PEP 100 250 mA 750 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1000 mA -15 -20 -25 IDQ = 125 mA -30 -35 -40 -45 -50 -55 0.5 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1000 mA 500 mA 250 mA VDD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz Two-Tone Measurements
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S27050HR3 MRF6S27050HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-20 -30 -40 -50 -60 -70 1
VDD = 28 Vdc, IDQ = 500 mA f1 = 2598.75 MHz, f2 = 2601.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
-10
-5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 0.1 1 10 100 TWO-TONE SPACING (MHz) VDD = 28 Vdc, Pout = 50 W (PEP), IDQ = 500 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz IM3-U IM3-L IM5-L IM5-U IM7-L IM7-U
3rd Order
5th Order 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100
Figure 7. Intermodulation Distortion Products versus Output Power
54 53 Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 27 28 29 30 P1dB = 46.91 dBm (49.06 W) P3dB = 47.44 dBm (55.46 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P6dB = 47.88 dBm (61.38 W)
Ideal
Actual VDD = 28 Vdc, IDQ = 500 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 2600 MHz 31 32 33 34 35 36 37
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc) 50 45 40 35 30 25 20 15 10 5 0 0.2 1 10 40 Pout, OUTPUT POWER (WATTS) AVG. W-CDMA D ALT1 Gps VDD = 28 Vdc, IDQ = 500 mA, f = 2600 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) -15 -20 -25 ACPR -30 -35 -40 -45 -50 -55 -60 -65 ACPR (dBc), ALT1 (dBc)
Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S27050HR3 MRF6S27050HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
20 19 Gps, POWER GAIN (dB) 18 25_C 17 16 15 14 13 12 0.1 D 1 VDD = 28 Vdc IDQ = 500 mA f = 2600 MHz 10 85_C Gps -30_C TC = -30_C
64 56 25_C 85_C 48 40 32 24 16 8 0 100
17 IDQ = 500 mA f = 2600 MHz D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB)
16
15
14 0.3 10 20
VDD = 24 V 30 40
28 V 50
32 V 60 70
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
35 VDD = 28 Vdc, IDQ = 500 mA WiMAX, 802.16, 64 QAM 3/4, 4 Bursts 7 MHz Channel Bandwidth, f = 2600 MHz 6 EVM, ERROR VECTOR MAGNITUDE (%) MTTF FACTOR (HOURS x AMPS2) 109
Figure 12. Power Gain versus Output Power
30 D, DRAIN EFFICIENCY (%)
5
108
25
4
20 D EVM
3
107
15
2 1
10 34 35 36 37 38 39 40 41 42 Pout, OUTPUT POWER (dBm)
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. Drain Efficiency and Error Vector Magnitude versus Output Power
Figure 14. MTTF Factor versus Junction Temperature
MRF6S27050HR3 MRF6S27050HSR3 RF Device Data Freescale Semiconductor 7
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW
Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 16. Single - Carrier W - CDMA Spectrum
MRF6S27050HR3 MRF6S27050HSR3 8 RF Device Data Freescale Semiconductor
Zsource f = 2700 MHz
f = 2500 MHz Zo = 25
Zload
f = 2500 MHz
f = 2700 MHz VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zsource W 6.897 + j6.212 7.062 + j6.412 7.239 + j6.611 7.428 + j6.808 7.630 + j7.002 7.846 + j7.193 8.075 + j7.380 8.320 + j7.561 8.579 + j7.737 Zload W 11.524 - j6.193 11.325 - j6.396 11.110 - j6.594 10.880 - j6.783 10.634 - j6.962 10.373 - j7.130 10.098 - j7.283 9.810 - j7.420 9.511 - j7.541
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance MRF6S27050HR3 MRF6S27050HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6S27050HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S27050HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF6S27050HR3 MRF6S27050HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2006 Description
* Initial Release of Data Sheet
MRF6S27050HR3 MRF6S27050HSR3 RF Device Data Freescale Semiconductor 11
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MRF6S27050HR3 MRF6S27050HSR3
Rev. 12 0, 11/2006 Document Number: MRF6S27050H
RF Device Data Freescale Semiconductor

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